Scrutinizing Hall effect in Mn1-xFexSi: Fermi surface evolution and hidden quantum criticality
Авторы:
V.V. Glushkov, I.I. Lobanova, V.Yu. Ivanov, V.V. Voronov, V.A. Dyadkin, N.M. Chubova, S.V. Grigoriev, and S.V. Demishev
Авторы из ОИКС:
Год публикации:
2015
Журнал:
Phys.Rev.Lett
vol. 115
256601
Абстракт:
Separating between the ordinary Hall effect and anomalous Hall effect in the paramagnetic phase of Mn1−xFexSi reveals an ordinary Hall effect sign inversion associated with the hidden quantum critical (QC) point x ∼ 0.11. The effective hole doping at intermediate Fe content leads to verifiable predictions in the field of fermiology, magnetic interactions, and QC phenomena in Mn1−xFexSi. The change of electron and hole concentrations is considered as a “driving force” for tuning the QC regime in Mn1−xFexSi via modifying the Ruderman-Kittel-Kasuya-Yosida exchange interaction within the Heisenberg model of magnetism.