Study of the Au/ SiO2Co65 at \% / GaAs heterostructure interfaces by the polarized neutron reflectometry method
Authors:
V. A. Ukleev, N. A. Grigorieva, A. A. Vorobiev, S. V. Grigoriev, L. V. Lutsev, E. A. Dyadkina, D. Lott, A. I. Stognii, N. N. Novitsky
Authors from CMD:
The year of the publication:
2011
Journal:
Phys. Part. Nuclei Lett.
N 10
vol. 8
1054-1055
Abstract:
Using the polarized neutron reflectometry method, we studied Au/SiO2 + Co(60 at %)/GaAs granular films, which display a giant injection magnetoresistance effect in a narrow temperature range close to T = 300 K. We revealed the existence of a layer having particular magnetic properties at the boundary of a film with a semiconductor GaAs substrate. Experiments carried out at temperatures T = 300 K and T = 100 K showed an insignificant difference in the magnetic profile of the heterostructure.