The effect of radiation defects in silicon single crystal lattice on the characteristic states of the interstitial muonium atom
Авторы:
S. G. Barsov, A. L. Getalov, V. A. Gordeev, V. A. Evseev, R. F. Konopleva, S. P. Kruglov, V. I. Kudinov, L. A. Kuz { \textquotesingle } min, S. M. Mikirtychants, E. V. Minaichev, G. G. Myasishcheva, Y. V. Obukhov, G. I. Savel { \textquotesingle } ev, V. G. Firsov, G. V. Shcherbakov
Авторы из ОИКС:
Год публикации:
1984
Журнал:
Hyperfine Interact
N 1-4
vol. 18
551-555
DOI:
Абстракт:
Radiation defects are shown experimentally to affect differently the normal and anomalous muonium states in silicon. This evidences essentially different mobilities of the two muonium states in the sample lattice